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Your search returned 29 records. Click on the hyperlinks to view further details of Titles.. |
Magazine Name : Ieee Transactions On Electron Devices
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Year : 2002 Volume number : 49 Issue: 11 |
A Model For Hydrogen-Induced Piezoelectric Effect In Inp Phemts
(Article)
Subject:
Hmet
,
Hydrogen
Author:
Sander
Mertens
page:
1849
-
1855
Fabrication Of Gaas Misfet With Nm-Thin Oxidized Layer Formed By Uv And Ozone Process
(Article)
Subject:
Compound Optoelectronics Displays And Imaging
Author:
Koicki
Liyama
page:
1856
-
1862
A Simple Method For Measuring The Cell Gap Of In Reflective Twisted Nematic Lcd
(Article)
Subject:
Cell Design
,
Reflective Memory System
Author:
X. Q
Zhu
page:
1863
-
1867
Two Types Of Neural Electron Traps Generated In The Gate Silicon Dioxide
(Article)
Subject:
Breakdown Voltage
Author:
J.
Zhang
page:
1868
-
1875
Experimental Evidence For Nonlucky Electron Model Effect In 0.15-Um Nmosfets
(Article)
Subject:
Mosfet
Author:
J H
Lee
page:
1876
-
1881
Impact Of Lateral Source/Drain Abruptness On Devices Performance
(Article)
Subject:
Lateral Source
Author:
W. C
Kwong
page:
1882
-
1890
Damascene W/Tin Gate Mosfets With Improved Performance For 0.1um Regime
(Article)
Subject:
Midgap Gate Material
Author:
Zhao
Li
page:
1891
-
1896
A Computational Study Of Thin-Body, Double -Gate Schotty Barrier Mosfets
(Article)
Subject:
Mosfet
,
Nanotechnology Potential
Author:
L. S
Guo
page:
1897
-
1902
Electrical Properties Of 1.5nm Sion Gate-Dielectric Using Radical Oxygen And Radical Nitrogen
(Article)
Subject:
Dielectric Films
Author:
M
Togo
page:
1903
-
1909
Role Of Positive Trapped Charge In Stress-Induced Leakage Current For Flash Eeprom Devices
(Article)
Subject:
Flash Eeprom
Author:
J.
Wang
page:
1910
-
1916
High Performance Of Novel Oxygen Diffusion Barrier Materials For Future High-Density Dynamic Random Access Memory Devices
(Article)
Subject:
Capacitance
Author:
K.T.
Yoon
page:
1917
-
1927
Physics-Based Analytical Modeling Of Potential And Electrical Field Distribution In Dual Material Gate (Dmg)-Mosfet
(Article)
Subject:
Carrier Transport Efficiency
,
Dual Material Gate Offset Voltage
,
Work Function
Author:
Nirmal R
Saxena
A
Haldar
page:
1928
-
1938
Impact Of Programming Charge Distribution On Threshold Voltage And Subthreshold Slope Of Nrom Memory Cells
(Article)
Subject:
Device Simulation
,
Flash Memories
Author:
L
Larcher
page:
1935
-
1946
Improvimg The Electrical Integrity Of Cu-Cosi2 Contacted N+P Junction Diodes Using Nitrogen-Incorporated Ta Films As A Diffusion Barrier
(Article)
Subject:
Cobalt Oxides
,
Copper Conductor
,
Diffusion Barriers
Author:
Wei-Bin
Yang
page:
1947
-
1954
Voltage And Temperature-Dependent Gate Capacitance And Current Model: Application To Zro2 N-Channel Mos Capacitor
(Article)
Subject:
High-K Gate Dielectric
,
Leakage Currents
Author:
Zijie
Fan
page:
1969
-
1978
Dc Spice Model For Nanocrystalline And Microcrystalline Silicon Tfts
(Article)
Subject:
Microcrystalline
,
Nanocrystalline Forming
Author:
D.
Dosev
page:
1979
-
1984
A Study Of Stress-Induced P+/N Salicided Junction Leakage Failure And Optimized Process Conditions For Sub-0.15-Um Cmos Technology
(Article)
Subject:
Parkdale Develop Designer Fiber
,
Young'S Modulus
Author:
J. -S.
Lee
page:
1985
-
1992
Complementry Metal-Ode -Semiconductor Thin-Film Transistor Circuits From A High-Temperature Polycrystalline Silicon Process On Steel Foil Substrates
(Article)
Subject:
Complentry Model
,
Metal Oxide
Author:
Tom
Wu
page:
1993
-
2000
A Power-Optimal Insertion Methodology For Global Interconnects In Nanometer Designs
(Article)
Subject:
Buffer Insertion
Author:
R. K.
Banerjee
page:
2001
-
2007
High Power - Optimal Repeater Insertation Methodology For Global Interconnects In Nanometer
(Article)
Subject:
Buffer Insertion
,
Delay Optimization
Author:
R. K.
Banerjee
page:
2001
-
2007
High-Performance Polymer Tfts Printed On A Plastic Substrate
(Article)
Subject:
Dual Layer
,
Micro Contact
Author:
C
Park
A
Kim
page:
2008
-
2015
Amomalous Phosphorous Diffusion
(Article)
Subject:
Diffusion
Author:
K
Suzuki
page:
2031
-
2034
Determining The Location Of Localized Defect In The Perpendicular Junction Configuration With The Use Of Electron Beam Induced Current
(Article)
Subject:
Electron Beam Application
Author:
P B
Phua
page:
2036
-
2046
A No-Snapback Ldmosfet With Automotive Esd Endurance
(Article)
Subject:
Breakdown Voltage
,
Electro Chemical Polishing
Author:
Ken
Kawamoto
page:
2047
-
2053
High-Power 4h-Sic Jbs Rectifiers
(Article)
Subject:
Schottky Collector
,
Merged
Author:
R. K
Singh
page:
2054
-
2063
Sic-Gto Thyristor Gate And Drift-Region Dopant Polarity Analysis Using Electrothermal Simulation
(Article)
Subject:
Power Semiconductor Switches
Author:
J.V.
Shah
page:
2064
-
2069
Quantitative Internal Thermal Energy Mapping Of Semi Conductor Devices Under Short Current Stress Using Backside Laser Interferometry
(Article)
Subject:
Electromagnetic Charge
Author:
Dionyz
Pogany
page:
2070
-
2079
Maximum Allowable Bulk Defect Density For Generation-Recombination Noise-Free Devices Operation
(Article)
Subject:
Carrier Trapping
Author:
Aili
Hou
page:
2080
-
2082
A Statistical Model For Silc In Flash Memories
(Article)
Subject:
Author:
Daniele
Ielmini
page:
-
-
-
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